Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

J. H. Zhao; F. Matsukura; K. Takamura; E. Abe; Daichi Chiba; H. Ohno

doi:10.1063/1.1413732

Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

J. H. Zhao, F. Matsukura, K. Takamura, E. Abe, Daichi Chiba, H. Ohno

Tohoku University

Research output: Contribution to journal › Article › peer-review

211 Citations (Scopus)

Abstract

Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K.

Original language	English
Pages (from-to)	2776-2778
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	17
DOIs	https://doi.org/10.1063/1.1413732
Publication status	Published - 2001 Oct 22

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abstract = "Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K.",

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AU - Chiba, Daichi

AU - Ohno, H.

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AB - Thin films of CrSb grown by solid-source molecular-beam epitaxy on GaAs, (Al, Ga)Sb, and GaSb are found to exhibit ferromagnetism. Reflection high-energy electron diffraction and high-resolution cross sectional transmission electron microscopy both indicate that the structure is zincblende. Temperature dependence of remanent magnetization shows that the ferromagnetic transition temperature is beyond 400 K.

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Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

Abstract

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