Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

Yahya Moubarak Meziani; Taiichi Otsuji; Mitsuhiro Hanabe; Takuma Ishibashi; Tomohiro Uno; Eiichi Sano

doi:10.1063/1.2459879

Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

Yahya Moubarak Meziani, Taiichi Otsuji, Mitsuhiro Hanabe, Takuma Ishibashi, Tomohiro Uno, Eiichi Sano

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.

Original language	English
Article number	061105
Journal	Applied Physics Letters
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.2459879
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2459879

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title = "Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect",

abstract = "A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.",

author = "Meziani, {Yahya Moubarak} and Taiichi Otsuji and Mitsuhiro Hanabe and Takuma Ishibashi and Tomohiro Uno and Eiichi Sano",

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T2 - Size effect

AU - Meziani, Yahya Moubarak

AU - Otsuji, Taiichi

AU - Hanabe, Mitsuhiro

AU - Ishibashi, Takuma

AU - Uno, Tomohiro

AU - Sano, Eiichi

N1 - Funding Information: The authors appreciate fruitful discussions with M. Dyakonov, V. Ryzhii, S. Mikhailov, and T. Asano. The authors thank T. Nagatsuma for his support on electro-optic sampling instrumentation. This work was financially supported in part by the SCOPE program from the MIC, Japan and by the Grant in Aid for Scientific Research (S) from the JSPS, Japan.

PY - 2007

Y1 - 2007

N2 - A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.

AB - A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.

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Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect

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