Abstract
A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 um is reported The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K.
| Original language | English |
|---|---|
| Pages (from-to) | 520-522 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 43 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2007 |