Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorqanic vapor phase epitaxy

Shigefusa Chichibu

doi:10.1063/1.118708

Room-temperature near-band-edge photoluminescence from CuInSe₂ heteroepitaxial layers grown by metalorqanic vapor phase epitaxy

Shigefusa Chichibu

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

High purity CuInSe₂ heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix.

Original language	English
Pages (from-to)	1840-1842
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118708
Publication status	Published - 1997 Apr 7

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10.1063/1.118708

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abstract = "High purity CuInSe2 heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix.",

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Room-temperature near-band-edge photoluminescence from CuInSe₂ heteroepitaxial layers grown by metalorqanic vapor phase epitaxy

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