TY - GEN
T1 - Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device
AU - Fukuhara, Mikio
AU - Yoshida, Hajime
PY - 2014
Y1 - 2014
N2 - We report the room-temperature switching and Coulomb blockade effects in three-terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.
AB - We report the room-temperature switching and Coulomb blockade effects in three-terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.
KW - glassy alloy field-effect transistor
KW - room-temperature Coulomb oscillation
UR - http://www.scopus.com/inward/record.url?scp=84903693720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903693720&partnerID=8YFLogxK
U2 - 10.1063/1.4878309
DO - 10.1063/1.4878309
M3 - Conference contribution
AN - SCOPUS:84903693720
SN - 9780735412323
T3 - AIP Conference Proceedings
SP - 205
EP - 209
BT - 7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
PB - American Institute of Physics Inc.
T2 - 7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
Y2 - 22 May 2011 through 27 May 2011
ER -