Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

H. Akinaga; M. Mizuguchi; K. Ono; M. Oshima

doi:10.1063/1.126421

Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

H. Akinaga, M. Mizuguchi, K. Ono, M. Oshima

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix.

Original language	English
Pages (from-to)	2600-2602
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	18
DOIs	https://doi.org/10.1063/1.126421
Publication status	Published - 2000 May 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126421

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abstract = "We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix.",

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AU - Akinaga, H.

AU - Mizuguchi, M.

AU - Ono, K.

AU - Oshima, M.

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Y1 - 2000/5/1

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AB - We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix.

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Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

Abstract

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