Room-temperature photoinduced magnetoresistance effect in GaAs including MnSb nanomagnets

H. Akinaga, M. Mizuguchi, K. Ono, M. Oshima

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix.

Original languageEnglish
Pages (from-to)2600-2602
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2000 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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