We show a photoinduced positive magnetoresistance (MR) effect (about 20%) under a low magnetic field (less than 0.1 T) at room temperature. The photoinduced MR effect has been observed in GaAs including nanoscale MnSb islands, when photons with the energy above the band gap of GaAs irradiated the sample. The photoinduced phenomena are due to an enhancement of tunneling probability between MnSb islands by photogenerated carriers in the GaAs matrix.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 May 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)