Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma

Michitaka Yamamoto; Yutaka Kunimune; Takashi Matsumae; Yuichi Kurashima; Hideki Takagi; Tadatomo Suga; Toshihiro Itoh; Eiji Higurashi

doi:10.23919/LTB-3D.2019.8735313

Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma

Michitaka Yamamoto, Yutaka Kunimune, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga, Toshihiro Itoh, Eiji Higurashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Silicon wafers with cavities and Si cap wafers were bonded by Au-Au surface activated bonding using ultrathin Au films (thickness: 15 nm) to achieve wafer-scale sealing. Pressurelessbonding (wafer pairs were simply placed in contact) was performed at room temperature in ambient air after surface activation by Ar plasma treatment. Bonding strength was measured using a razor blade test. Bonding strong enough to be broken from Si wafers was obtained. Evaluation of sealing quality with a He leak tester showed that the leak rate was below the lower limit of the tester (< 1.6×10^-10 Pa·m³/s).

Original language	English
Title of host publication	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62
Number of pages	1
ISBN (Electronic)	9784904743072
DOIs	https://doi.org/10.23919/LTB-3D.2019.8735313
Publication status	Published - 2019 May
Externally published	Yes
Event	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan Duration: 2019 May 21 → 2019 May 25

Publication series

Name	Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference	6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/Territory	Japan
City	Kanazawa, Ishikawa
Period	19/5/21 → 19/5/25

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.23919/LTB-3D.2019.8735313

Cite this

Yamamoto, M., Kunimune, Y., Matsumae, T., Kurashima, Y., Takagi, H., Suga, T., Itoh, T., & Higurashi, E. (2019). Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 (pp. 62). [8735313] (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2019.8735313

Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma. / Yamamoto, Michitaka; Kunimune, Yutaka; Matsumae, Takashi et al.
Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 62 8735313 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, M, Kunimune, Y, Matsumae, T, Kurashima, Y, Takagi, H, Suga, T, Itoh, T & Higurashi, E 2019, Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma. in Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019., 8735313, Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Institute of Electrical and Electronics Engineers Inc., pp. 62, 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019, Kanazawa, Ishikawa, Japan, 19/5/21. https://doi.org/10.23919/LTB-3D.2019.8735313

Yamamoto M, Kunimune Y, Matsumae T, Kurashima Y, Takagi H, Suga T et al. Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma. In Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 62. 8735313. (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019). doi: 10.23919/LTB-3D.2019.8735313

Yamamoto, Michitaka ; Kunimune, Yutaka ; Matsumae, Takashi et al. / Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma. Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 62 (Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019).

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abstract = "Silicon wafers with cavities and Si cap wafers were bonded by Au-Au surface activated bonding using ultrathin Au films (thickness: 15 nm) to achieve wafer-scale sealing. Pressurelessbonding (wafer pairs were simply placed in contact) was performed at room temperature in ambient air after surface activation by Ar plasma treatment. Bonding strength was measured using a razor blade test. Bonding strong enough to be broken from Si wafers was obtained. Evaluation of sealing quality with a He leak tester showed that the leak rate was below the lower limit of the tester (< 1.6×10-10 Pa·m3/s).",

author = "Michitaka Yamamoto and Yutaka Kunimune and Takashi Matsumae and Yuichi Kurashima and Hideki Takagi and Tadatomo Suga and Toshihiro Itoh and Eiji Higurashi",

note = "Publisher Copyright: {\textcopyright} 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.; 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 ; Conference date: 21-05-2019 Through 25-05-2019",

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AU - Yamamoto, Michitaka

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AU - Takagi, Hideki

AU - Suga, Tadatomo

AU - Itoh, Toshihiro

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AB - Silicon wafers with cavities and Si cap wafers were bonded by Au-Au surface activated bonding using ultrathin Au films (thickness: 15 nm) to achieve wafer-scale sealing. Pressurelessbonding (wafer pairs were simply placed in contact) was performed at room temperature in ambient air after surface activation by Ar plasma treatment. Bonding strength was measured using a razor blade test. Bonding strong enough to be broken from Si wafers was obtained. Evaluation of sealing quality with a He leak tester showed that the leak rate was below the lower limit of the tester (< 1.6×10-10 Pa·m3/s).

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Room-temperature pressureless wafer sealing using ultrathin Au films activated by Ar plasma

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