Room-temperature resonant tunneling diode with high-Ge-fraction strained Si_1-xGe_x and nanometer-order ultrathin Si

Engineering

• Barrier Height 33%
• Characteristics 100%
• Conductance 100%
• Growth Temperature 33%
• Heterostructures 33%
• High Temperature 33%
• Large Scale Integrated Circuit 33%
• Lower Temperature 33%
• Nanometre 66%
• Quantum Effect 33%
• Room Temperature 66%
• Roughness 33%
• Thickness 33%

Physics

• Differences 33%
• Discontinuity 33%
• Fractions 66%
• Growth 33%
• High Temperature 33%
• Resonant Tunneling Diodes 66%
• Retarding 33%
• Room Temperature 66%
• Roughness 33%
• Semiconductor 33%
• Thermionic Emission 66%