Room temperature SiC-SiC direct wafer bonding by SAB methods

Fengwen Mu; Kenichi Iguchi; Haruo Nakazawa; Yoshikazu Takahashi; Masahisa Fujino; Tadatomo Suga

doi:10.23919/LTB-3D.2017.7947399

Room temperature SiC-SiC direct wafer bonding by SAB methods

Fengwen Mu, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Masahisa Fujino, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

Original language	English
Title of host publication	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3
Number of pages	1
ISBN (Electronic)	9784904743034
DOIs	https://doi.org/10.23919/LTB-3D.2017.7947399
Publication status	Published - 2017 Jun 13
Externally published	Yes
Event	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan Duration: 2017 May 16 → 2017 May 18

Publication series

Name	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Country/Territory	Japan
City	Tokyo
Period	17/5/16 → 17/5/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

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10.23919/LTB-3D.2017.7947399

Cite this

Mu, F., Iguchi, K., Nakazawa, H., Takahashi, Y., Fujino, M., & Suga, T. (2017). Room temperature SiC-SiC direct wafer bonding by SAB methods. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 3). [7947399] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947399

Room temperature SiC-SiC direct wafer bonding by SAB methods. / Mu, Fengwen; Iguchi, Kenichi; Nakazawa, Haruo et al.
Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3 7947399 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mu, F, Iguchi, K, Nakazawa, H, Takahashi, Y, Fujino, M & Suga, T 2017, Room temperature SiC-SiC direct wafer bonding by SAB methods. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947399, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Institute of Electrical and Electronics Engineers Inc., pp. 3, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947399

Mu F, Iguchi K, Nakazawa H, Takahashi Y, Fujino M, Suga T. Room temperature SiC-SiC direct wafer bonding by SAB methods. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 3. 7947399. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). doi: 10.23919/LTB-3D.2017.7947399

Mu, Fengwen ; Iguchi, Kenichi ; Nakazawa, Haruo et al. / Room temperature SiC-SiC direct wafer bonding by SAB methods. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 3 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

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title = "Room temperature SiC-SiC direct wafer bonding by SAB methods",

abstract = "Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.",

author = "Fengwen Mu and Kenichi Iguchi and Haruo Nakazawa and Yoshikazu Takahashi and Masahisa Fujino and Tadatomo Suga",

note = "Publisher Copyright: {\textcopyright} 2017 JSPS 191st Committee on Innovative Interface Bonding Technology.; 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 ; Conference date: 16-05-2017 Through 18-05-2017",

year = "2017",

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doi = "10.23919/LTB-3D.2017.7947399",

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AU - Mu, Fengwen

AU - Iguchi, Kenichi

AU - Nakazawa, Haruo

AU - Takahashi, Yoshikazu

AU - Fujino, Masahisa

AU - Suga, Tadatomo

PY - 2017/6/13

Y1 - 2017/6/13

N2 - Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

AB - Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

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ER -

Room temperature SiC-SiC direct wafer bonding by SAB methods

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