TY - GEN
T1 - Room temperature Si/Si wafer direct bonding in air
AU - Wang, Chenxi
AU - Higurashi, Eiji
AU - Suga, Tadatomo
N1 - Funding Information:
J.B. and C.K. conceived and designed the project, and contributed equally to it. N.Z., R.G., J.Y., X.X., and J.W. performed the experiments. Y.Z. and Z.Z. acquired the data. X.L., Z.L., Z.L., and D.G. analyzed and interpreted the data. N.Z. wrote the paper. The authors thank the Department of Urology of the First Hospital of China Medical University (Shenyang, Liaoning, China) for providing human RCC samples. The authors also thank Jingjie PTM BioLabs (Hangzhou, Zhejiang, China) for technical assistance in experiments. The authors greatly appreciate Dr. Chen Bu in Jingjie PTM Bio-labs (Hangzhou, Zhejiang, China) for the help in paper preparing. This work was supported by National Natural Science Foundation of China (Beijing, China, 81372722), Liaoning Province Science and Technology Project (Shenyang, Liaoning, China, 201602830), Shenyang Major Science and Technology Research and Development Project (Shenyang, Liaoning, China, 17-230-098).
PY - 2007
Y1 - 2007
N2 - Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices. But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (-10 s) and followed by N2 radicals for 60 s is used for surface activation. Strong bonding strength (about 2-2.5 J/m2) is achieved at room temperature without requiring any annealing process. It is close to the bulk-fracture of silicon. Furthermore, no voids are observed at Si/Si interfaces even if the bonded wafer pairs are heated from 200°C to 800°C in subsequent annealing process. The bonding mechanism is proposed in this paper. The authors believe that this void-free, room temperature bonding technique by sequential plasma activation is suitable for the microelectromechanical systems manufacture process and wafer-scale packaging.
AB - Wafer direct bonding technique offers flexible and inexpensive ways to fabricate novel semiconductor devices. But its application is much limited by high temperature process and void problem. In this study, room temperature Si/Si wafer direct bonding has been performed using sequential plasma pretreatment prior to bonding. A shorter O2 reactive ion etching (RIE) pretreatment (-10 s) and followed by N2 radicals for 60 s is used for surface activation. Strong bonding strength (about 2-2.5 J/m2) is achieved at room temperature without requiring any annealing process. It is close to the bulk-fracture of silicon. Furthermore, no voids are observed at Si/Si interfaces even if the bonded wafer pairs are heated from 200°C to 800°C in subsequent annealing process. The bonding mechanism is proposed in this paper. The authors believe that this void-free, room temperature bonding technique by sequential plasma activation is suitable for the microelectromechanical systems manufacture process and wafer-scale packaging.
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U2 - 10.1109/ICEPT.2007.4441488
DO - 10.1109/ICEPT.2007.4441488
M3 - Conference contribution
AN - SCOPUS:50349101981
SN - 1424413923
SN - 9781424413928
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
BT - Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT
T2 - 2007 8th International Conference on Electronic Packaging Technology, ICEPT
Y2 - 14 August 2007 through 17 August 2007
ER -