Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

Nobuhide Yokota, Yohei Aoshima, Kazuhiro Ikeda, Hitoshi Kawaguchi

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11 Citations (Scopus)


We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

Original languageEnglish
Article number072406
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2014 Feb 17


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