Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics

Takane Imaoka, Takeru Okada, Seiji Samukawa, Kimihisa Yamamoto

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N-N bond cleavage and nitrogen anion formation (N3-) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl3 by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).

Original languageEnglish
Pages (from-to)41629-41633
Number of pages5
JournalACS applied materials & interfaces
Issue number48
Publication statusPublished - 2017 Dec 6


  • gallium nitride
  • nanosheet
  • neutral beam process
  • nitridation reaction
  • solid-gas interface


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