TY - JOUR
T1 - Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method
AU - Takigawa, Ryo
AU - Higurashi, Eiji
AU - Asano, Tanemasa
N1 - Funding Information:
The authors would like to thank Mitsubishi Heavy Industries Machine Tool Co., Ltd. for its assistance with the surface-activated bonding experiments and Dr. Akihiro Ikeda at Kyushu University for helpful discussions. This study was supported in part by JSPS KAKENHI Grant Number JP17H04925.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/6
Y1 - 2018/6
N2 - In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.
AB - In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.
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U2 - 10.7567/JJAP.57.06HJ12
DO - 10.7567/JJAP.57.06HJ12
M3 - Article
AN - SCOPUS:85047956393
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 06HJ12
ER -