Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers

Eiji Higurashi, Hayato Azuma, Michitaka Yamamoto, Takeshi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. Bonding was performed immediately after removing the Au passivation layers and deposition of Si nanolayers by Ar fast atom beam irradiation. Amorphous Ti/Si layers formed at the bonding interfaces, and strong void-free bonding was achieved.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages84
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/TerritoryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

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