@inproceedings{81cf828dde0d4b66aa714dfdeef91c66,
title = "Rotated epitaxy of 3C-SiC(111) on Si(110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy",
abstract = "3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20%) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.",
keywords = "Epitaxy, Graphene, Monomethylsilane, Silicon, XRD",
author = "Shota Sambonsuge and Eiji Saito and Jung, {Myung Ho} and Hirokazu Fukidome and Sergey Filimonov and Maki Suemitsu",
year = "2013",
doi = "10.4028/www.scientific.net/MSF.740-742.339",
language = "English",
isbn = "9783037856246",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "339--343",
editor = "Lebedev, {Alexander A.} and Davydov, {Sergey Yu.} and Ivanov, {Pavel A.} and Levinshtein, {Mikhail E.}",
booktitle = "Silicon Carbide and Related Materials 2012, ECSCRM 2012",
note = "9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 ; Conference date: 02-09-2012 Through 06-09-2012",
}