Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba; Ryotaro Kumashiro; Taishi Takenobu; Naoya Komatsu; Yusuke Suto; Yoshihiro Iwasa; Kenta Kotani; Iwao Kawayama; Masayoshi Tonouchi; Katsumi Tanigaki

doi:10.1557/proc-0965-s08-04

Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High quality BaTiO₃ thin film epitaxially grown on a Nb-doped SrTiO₃ (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO₃ thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO₂ gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO₂/doped-Si.

Original language	English
Title of host publication	Organic Electronics
Subtitle of host publication	Materials, Devices and Applications
Publisher	Materials Research Society
Pages	270-275
Number of pages	6
ISBN (Print)	9781604234176
DOIs	https://doi.org/10.1557/proc-0965-s08-04
Publication status	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Nov 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	965
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/11/29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0965-s08-04

Cite this

Hiroshiba, N., Kumashiro, R., Takenobu, T., Komatsu, N., Suto, Y., Iwasa, Y., Kotani, K., Kawayama, I., Tonouchi, M., & Tanigaki, K. (2006). Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator. In Organic Electronics: Materials, Devices and Applications (pp. 270-275). (Materials Research Society Symposium Proceedings; Vol. 965). Materials Research Society. https://doi.org/10.1557/proc-0965-s08-04

Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator. / Hiroshiba, Nobuya; Kumashiro, Ryotaro; Takenobu, Taishi et al.
Organic Electronics: Materials, Devices and Applications. Materials Research Society, 2006. p. 270-275 (Materials Research Society Symposium Proceedings; Vol. 965).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiroshiba, N, Kumashiro, R, Takenobu, T, Komatsu, N, Suto, Y, Iwasa, Y, Kotani, K, Kawayama, I, Tonouchi, M & Tanigaki, K 2006, Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator. in Organic Electronics: Materials, Devices and Applications. Materials Research Society Symposium Proceedings, vol. 965, Materials Research Society, pp. 270-275, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27. https://doi.org/10.1557/proc-0965-s08-04

Hiroshiba N, Kumashiro R, Takenobu T, Komatsu N, Suto Y, Iwasa Y et al. Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator. In Organic Electronics: Materials, Devices and Applications. Materials Research Society. 2006. p. 270-275. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-0965-s08-04

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abstract = "High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.",

author = "Nobuya Hiroshiba and Ryotaro Kumashiro and Taishi Takenobu and Naoya Komatsu and Yusuke Suto and Yoshihiro Iwasa and Kenta Kotani and Iwao Kawayama and Masayoshi Tonouchi and Katsumi Tanigaki",

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AU - Kumashiro, Ryotaro

AU - Takenobu, Taishi

AU - Komatsu, Naoya

AU - Suto, Yusuke

AU - Iwasa, Yoshihiro

AU - Kotani, Kenta

AU - Kawayama, Iwao

AU - Tonouchi, Masayoshi

AU - Tanigaki, Katsumi

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AB - High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

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