Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2

H. Kimura; T. Fukumura; M. Kawasaki; K. Inaba; T. Hasegawa; H. Koinuma

doi:10.1063/1.1430856

Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO₂

H. Kimura, T. Fukumura, M. Kawasaki, K. Inaba, T. Hasegawa, H. Koinuma

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

169 Citations (Scopus)

Abstract

Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO₂, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10 ²⁰cm^-3 is achieved by Sb doping. A Sn _0.95Mn_0.05O₂:Sb film shows giant positive magnetoresistance as large as 60% at 5 K.

Original language	English
Pages (from-to)	94-96
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	1
DOIs	https://doi.org/10.1063/1.1430856
Publication status	Published - 2002 Jan 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10 20cm-3 is achieved by Sb doping. A Sn 0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K.",

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AU - Kimura, H.

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AU - Hasegawa, T.

AU - Koinuma, H.

PY - 2002/1/7

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AB - Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10 20cm-3 is achieved by Sb doping. A Sn 0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K.

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Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO₂

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