Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10 20cm-3 is achieved by Sb doping. A Sn 0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2002 Jan 7|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)