S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

Young Zo Yoo; Zheng Wu Jin; T. Chikyow; T. Fukumura; M. Kawasaki; H. Koinuma

doi:10.1063/1.1521577

S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

Young Zo Yoo, Zheng Wu Jin, T. Chikyow, T. Fukumura, M. Kawasaki, H. Koinuma

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

160 Citations (Scopus)

Abstract

Sulphur doping in zincoxide film was done by supplying zincsulphide species with pulsed-laser-deposition method. It was found that variations of lattice constants and band gaps with respect to sulphur content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation and resistivity than those of ZnO owing to higher carrier concentration.

Original language	English
Pages (from-to)	3798-3800
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	20
DOIs	https://doi.org/10.1063/1.1521577
Publication status	Published - 2002 Nov 11

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abstract = "Sulphur doping in zincoxide film was done by supplying zincsulphide species with pulsed-laser-deposition method. It was found that variations of lattice constants and band gaps with respect to sulphur content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation and resistivity than those of ZnO owing to higher carrier concentration.",

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AU - Kawasaki, M.

AU - Koinuma, H.

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AB - Sulphur doping in zincoxide film was done by supplying zincsulphide species with pulsed-laser-deposition method. It was found that variations of lattice constants and band gaps with respect to sulphur content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation and resistivity than those of ZnO owing to higher carrier concentration.

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S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

Abstract

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