@inproceedings{ae704bdb2ada43b68e3a293fa4859497,
title = "S3-P4: Impact of drain conductance in InGaaS-HEMTs operated in a class-F amplifier",
abstract = "The Power Added Efficiency (PAE) of amplifiers operated in wave bands, such as 60 GHz, is still under 30%. A switching type amplifier consisting of ultrahigh-frequency transistors is a promising way to improve PAE. Therefore we proposed 60-GHz-band class-F amplifier with InGaAs-based high electron mobility transistors (HEMTs). In such high frequencies, the parasitic delay time is the main cause of degradation of the RF characteristics in HEMTs. In this paper, we characterized the parasitic gate delay time when the device is operated on the load line of the class-F amplifier. This result suggests us that the drain conductance affects the degradation of parasitic delay time at low drain bias condition on the load line. Hence the reduction of the source resistance and drain resistance is also important as well as the reduction of capacitance in order to improve the total performance of the amplifier.",
keywords = "Class F, Delay time anarysis, InGaAs-HEMTs, Millimater Wave, PAE",
author = "Tomohiro Yoshida and Taiichi Otsuji and Tetsuya Suemitsu and Masashi Oyama and Kunihiko Watanabe and Yohtaro Umeda",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Lester Eastman Conference on High Performance Devices, LEC 2014 ; Conference date: 05-08-2014 Through 07-08-2014",
year = "2014",
month = nov,
day = "10",
doi = "10.1109/LEC.2014.6951560",
language = "English",
series = "Lester Eastman Conference 2014 - High Performance Devices, LEC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Lester Eastman Conference 2014 - High Performance Devices, LEC 2014",
address = "United States",
}