Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers

Hideaki Fukuzawa; Yuzo Kamiguchi; Katsuhiko Koi; Hitoshi Iwasaki; Masashi Sahashi

doi:10.1063/1.1434551

Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers

Hideaki Fukuzawa, Yuzo Kamiguchi, Katsuhiko Koi, Hitoshi Iwasaki, Masashi Sahashi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigated the saturation magnetostriction (λ_s) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, λ_s becomes positively large; on the other hand, λ_s becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where λ_s is changed by the film strain. The λ_s sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe λ_s becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film.

Original language	English
Pages (from-to)	3120-3124
Number of pages	5
Journal	Journal of Applied Physics
Volume	91
Issue number	5
DOIs	https://doi.org/10.1063/1.1434551
Publication status	Published - 2002 Feb 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "We investigated the saturation magnetostriction (λs) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, λs becomes positively large; on the other hand, λs becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where λs is changed by the film strain. The λs sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe λs becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film.",

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T1 - Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers

AU - Fukuzawa, Hideaki

AU - Kamiguchi, Yuzo

AU - Koi, Katsuhiko

AU - Iwasaki, Hitoshi

AU - Sahashi, Masashi

PY - 2002/2/15

Y1 - 2002/2/15

N2 - We investigated the saturation magnetostriction (λs) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, λs becomes positively large; on the other hand, λs becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where λs is changed by the film strain. The λs sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe λs becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film.

AB - We investigated the saturation magnetostriction (λs) of an ultrathin CoFe free-layer on double-layered underlayers of Ru/Cu. By increasing the Ru underlayer thickness, λs becomes positively large; on the other hand, λs becomes negatively large by increasing the Cu underlayer thickness. This tendency can be explained by the model where λs is changed by the film strain. The λs sensitivity on the Cu underlayer thickness becomes large with increasing the Co concentration of the CoFe free-layer. This indicates that CoFe λs becomes sensitive to strain with increasing Co concentration. In order to realize small magnetostriction spin-valve films with an ultrathin CoFe free-layer, we have to take care of the lattice strain of the film.

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Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers

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