We studied a scaling property of a three-terminal domain wall (DW)-motion device, which is one of the promising candidates for future low-power nonvolatile memory and logic-in-memory architecture. Using several assumptions, we derived the scaling factor of the switching current, switching time, resistance of the write-current path, and data storage stability. We also quantitatively evaluated the variation of these parameters with the device size. It was found that the switching current and time decrease almost linearly with the device size, while the variation of the resistance of the write-current path is negligible. The switching current and time for 32-nm-wide device are less than 100 μA and 2 ns, respectively. A required critical field which assures a sufficient thermal stability of stored data was calculated for each generation. Furthermore, future issues and intrinsic limiter for the size reduction were discussed.
- Magnetic domain walls
- magnetic random access memory
- nonvolatile logic