TY - JOUR
T1 - Scaling analysis of a- and poly-Si surface roughness by atomic force microscopy
AU - Yoshinobu, T.
AU - Iwamoto, A.
AU - Sudoh, K.
AU - Iwasaki, H.
PY - 1995
Y1 - 1995
N2 - The scaling behavior of the surface roughness of a- and poly-Si deposited on Si was investigated by atomic force microscopy (AFM). The interface width W(L), defined as the rms roughness as a function of the linear size of the surface area, was calculated from various sizes of AFM images. W(L) increased as a power of L with the roughness exponent α on shorter length scales, and saturated at a constant value of σ on a macroscopic scale. The value of roughness exponent α was 0.48 and 0.90 for a- and poly-Si, respectively, and σ was 1.5 and 13.6nm for 350nm-thick a-Si and 500nm-thick poly-Si, respectively. The AFM images were compared with the surfaces generated by simulation.
AB - The scaling behavior of the surface roughness of a- and poly-Si deposited on Si was investigated by atomic force microscopy (AFM). The interface width W(L), defined as the rms roughness as a function of the linear size of the surface area, was calculated from various sizes of AFM images. W(L) increased as a power of L with the roughness exponent α on shorter length scales, and saturated at a constant value of σ on a macroscopic scale. The value of roughness exponent α was 0.48 and 0.90 for a- and poly-Si, respectively, and σ was 1.5 and 13.6nm for 350nm-thick a-Si and 500nm-thick poly-Si, respectively. The AFM images were compared with the surfaces generated by simulation.
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M3 - Conference article
AN - SCOPUS:0029210878
SN - 0272-9172
VL - 367
SP - 329
EP - 334
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1994 MRS Fall Meeting
Y2 - 28 November 1994 through 30 November 1994
ER -