Scaling analysis of SiO2/Si interface roughness by atomic force microscopy

Tatsuo Yoshinobu, Atsushi Iwamoto, Hiroshi Iwasaki

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The scaling behavior of SiO2/Si interface roughness was investigated by atomic force microscopy. The rms value of the roughness increased as a power of the scale up to 100 nm with the scaling exponent of 0.3–0.5, and saturated at about 0.3 nm above the 100 nm scale. The scaling behavior of the observed roughness was well approximated by an exponential autocorrelation function with the correlation length of about 15 nm, but not by a Gaussian one. Such scaling behavior should be taken into account in theoretical calculation of surface roughness scattering, and also in metrology of roughness parameters.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalJapanese journal of applied physics
Issue number1
Publication statusPublished - 1994
Externally publishedYes


  • Atomic force microscopy
  • Fractal
  • Interface
  • Roughness
  • Scaling
  • Self-affine
  • SiO
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Scaling analysis of SiO2/Si interface roughness by atomic force microscopy'. Together they form a unique fingerprint.

Cite this