Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

Takashi Matsukawa; Koichi Fukuda; Yongxun Liu; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Kazuhiko Endo; Shin Ichi O'Uchi; Shinji Migita; Wataru Mizubayashi; Yukinori Morita; Hiroyuki Ota; Meishoku Masahara

doi:10.1109/IEDM.2014.7047035

Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shin Ichi O'Uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (V_t) as well as small V_t variability, namely A^Vt. It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of A_Vt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	12.1.1-12.1.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047035
Publication status	Published - 2015 Feb 20
Externally published	Yes
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 2014 Dec 15 → 2014 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	14/12/15 → 14/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2014.7047035

Cite this

Matsukawa, T., Fukuda, K., Liu, Y., Tsukada, J., Yamauchi, H., Ishikawa, Y., Endo, K., O'Uchi, S. I., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., & Masahara, M. (2015). Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 12.1.1-12.1.4). [7047035] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047035

Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology. / Matsukawa, Takashi; Fukuda, Koichi; Liu, Yongxun et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 12.1.1-12.1.4 7047035 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsukawa, T, Fukuda, K, Liu, Y, Tsukada, J, Yamauchi, H, Ishikawa, Y, Endo, K, O'Uchi, SI, Migita, S, Mizubayashi, W, Morita, Y, Ota, H & Masahara, M 2015, Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047035, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 12.1.1-12.1.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047035

Matsukawa T, Fukuda K, Liu Y, Tsukada J, Yamauchi H, Ishikawa Y et al. Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 12.1.1-12.1.4. 7047035. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047035

Matsukawa, Takashi ; Fukuda, Koichi ; Liu, Yongxun et al. / Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 12.1.1-12.1.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

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abstract = "The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (Vt) as well as small Vt variability, namely AVt. It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of AVt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.",

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AU - Ishikawa, Yuki

AU - Endo, Kazuhiko

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Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

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