TY - JOUR
T1 - Scaling magnetic tunnel junction down to single-digit nanometers - Challenges and prospects
AU - Jinnai, Butsurin
AU - Watanabe, Kyota
AU - Fukami, Shunsuke
AU - Ohno, Hideo
N1 - Funding Information:
The authors would like to thank H. Sato, S. Kanai, Y. Takeuchi, J. Igarashi, and T. Funatsu for their fruitful discussion. This work was partly supported by JST-OPERA Grant No. JPMJOP1611, Cooperative Research Projects of RIEC, and JSPS KAKENHI Grant No. JP19K04486.
Publisher Copyright:
© 2020 Author(s).
PY - 2020/4/20
Y1 - 2020/4/20
N2 - Magnetic tunnel junction (MTJ), a spintronics device, has been intensively developed in the past couple of decades because of its high potential in terms of non-volatility, fast operation, virtually infinite endurance, scalability, and compatibility with complementary metal-oxide-semiconductor (CMOS) integrated circuits as well as their process and circuits. Today, high-volume manufacturing of spin-transfer torque magnetoresistive random access memory based on MTJ has been initiated for embedded memory applications in CMOS logic. Whether MTJ is scalable along with the advancement of CMOS technology is critical for the technology's future. Here, we review the scaling of MTJ technology, from in-plane anisotropy MTJs to perpendicular interfacial- or shape-anisotropy MTJs. We also discuss challenges and prospects in the future 1X- and X-nm era.
AB - Magnetic tunnel junction (MTJ), a spintronics device, has been intensively developed in the past couple of decades because of its high potential in terms of non-volatility, fast operation, virtually infinite endurance, scalability, and compatibility with complementary metal-oxide-semiconductor (CMOS) integrated circuits as well as their process and circuits. Today, high-volume manufacturing of spin-transfer torque magnetoresistive random access memory based on MTJ has been initiated for embedded memory applications in CMOS logic. Whether MTJ is scalable along with the advancement of CMOS technology is critical for the technology's future. Here, we review the scaling of MTJ technology, from in-plane anisotropy MTJs to perpendicular interfacial- or shape-anisotropy MTJs. We also discuss challenges and prospects in the future 1X- and X-nm era.
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U2 - 10.1063/5.0004434
DO - 10.1063/5.0004434
M3 - Review article
AN - SCOPUS:85083957066
SN - 0003-6951
VL - 116
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 160501
ER -