ScAlN Lamb wave resonator in GHz range released by XeF2 etching

Akira Konno, Masahiro Sumisaka, Akihiko Teshigahara, Kazuhiko Kano, Ken Ya Hashimo, Hideki Hirano, Masayoshi Esashi, Michio Kadota, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

48 Citations (Scopus)


Recently, it was reported that the piezoelectric characteristic of AlN was enhanced by doping Sc, and that 40% Sc-doped AlN (Sc0.4Al 0.6N) had approximately 5 times higher piezoelectricity than pure AlN. In this study, we designed, fabricated and evaluated Lamb wave resonators using a Sc0.4Al0.6N thin film. First, we examined elastic constants c44E and c44D of Sc 0.4Al0.6N using a thickness-shear wave resonator excited by parallel electric field, and then designed Lamb wave resonators using revised material constants. The Lamb wave resonators were fabricated by electron beam lithography, reactive ion etching, XeF2 release etching etc. The maximum and average electromechanical coupling coefficients were 8.3% and 6.8%, respectively, for 2.6 GHz devices working in S0 mode.

Original languageEnglish
Title of host publication2013 IEEE International Ultrasonics Symposium, IUS 2013
Number of pages4
Publication statusPublished - 2013
Event2013 IEEE International Ultrasonics Symposium, IUS 2013 - Prague, Czech Republic
Duration: 2013 Jul 212013 Jul 25

Publication series

NameIEEE International Ultrasonics Symposium, IUS
ISSN (Print)1948-5719
ISSN (Electronic)1948-5727


Conference2013 IEEE International Ultrasonics Symposium, IUS 2013
Country/TerritoryCzech Republic


  • Lamb wave
  • Micro Electro Mechanical Systems (MEMS)
  • Resonator
  • ScAlN


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