ScAlN Lamb wave resonator in GHz range released by XeF2 etching

Akira Konno; Masahiro Sumisaka; Akihiko Teshigahara; Kazuhiko Kano; Ken Ya Hashimo; Hideki Hirano; Masayoshi Esashi; Michio Kadota; Shuji Tanaka

doi:10.1109/ULTSYM.2013.0350

ScAlN Lamb wave resonator in GHz range released by XeF₂ etching

Akira Konno, Masahiro Sumisaka, Akihiko Teshigahara, Kazuhiko Kano, Ken Ya Hashimo, Hideki Hirano, Masayoshi Esashi, Michio Kadota, Shuji Tanaka

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

48 Citations (Scopus)

Abstract

Recently, it was reported that the piezoelectric characteristic of AlN was enhanced by doping Sc, and that 40% Sc-doped AlN (Sc_0.4Al _0.6N) had approximately 5 times higher piezoelectricity than pure AlN. In this study, we designed, fabricated and evaluated Lamb wave resonators using a Sc_0.4Al_0.6N thin film. First, we examined elastic constants c₄₄^E and c₄₄^D of Sc _0.4Al_0.6N using a thickness-shear wave resonator excited by parallel electric field, and then designed Lamb wave resonators using revised material constants. The Lamb wave resonators were fabricated by electron beam lithography, reactive ion etching, XeF₂ release etching etc. The maximum and average electromechanical coupling coefficients were 8.3% and 6.8%, respectively, for 2.6 GHz devices working in S₀ mode.

Original language	English
Title of host publication	2013 IEEE International Ultrasonics Symposium, IUS 2013
Pages	1378-1381
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2013.0350
Publication status	Published - 2013
Event	2013 IEEE International Ultrasonics Symposium, IUS 2013 - Prague, Czech Republic Duration: 2013 Jul 21 → 2013 Jul 25

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Conference

Conference	2013 IEEE International Ultrasonics Symposium, IUS 2013
Country/Territory	Czech Republic
City	Prague
Period	13/7/21 → 13/7/25

Keywords

Lamb wave
Micro Electro Mechanical Systems (MEMS)
Resonator
ScAlN

Access to Document

10.1109/ULTSYM.2013.0350

Cite this

Konno, A., Sumisaka, M., Teshigahara, A., Kano, K., Hashimo, K. Y., Hirano, H., Esashi, M., Kadota, M., & Tanaka, S. (2013). ScAlN Lamb wave resonator in GHz range released by XeF₂ etching. In 2013 IEEE International Ultrasonics Symposium, IUS 2013 (pp. 1378-1381). Article 6725020 (IEEE International Ultrasonics Symposium, IUS). https://doi.org/10.1109/ULTSYM.2013.0350

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title = "ScAlN Lamb wave resonator in GHz range released by XeF2 etching",

abstract = "Recently, it was reported that the piezoelectric characteristic of AlN was enhanced by doping Sc, and that 40% Sc-doped AlN (Sc0.4Al 0.6N) had approximately 5 times higher piezoelectricity than pure AlN. In this study, we designed, fabricated and evaluated Lamb wave resonators using a Sc0.4Al0.6N thin film. First, we examined elastic constants c44E and c44D of Sc 0.4Al0.6N using a thickness-shear wave resonator excited by parallel electric field, and then designed Lamb wave resonators using revised material constants. The Lamb wave resonators were fabricated by electron beam lithography, reactive ion etching, XeF2 release etching etc. The maximum and average electromechanical coupling coefficients were 8.3% and 6.8%, respectively, for 2.6 GHz devices working in S0 mode.",

keywords = "Lamb wave, Micro Electro Mechanical Systems (MEMS), Resonator, ScAlN",

author = "Akira Konno and Masahiro Sumisaka and Akihiko Teshigahara and Kazuhiko Kano and Hashimo, {Ken Ya} and Hideki Hirano and Masayoshi Esashi and Michio Kadota and Shuji Tanaka",

year = "2013",

doi = "10.1109/ULTSYM.2013.0350",

language = "English",

isbn = "9781467356862",

series = "IEEE International Ultrasonics Symposium, IUS",

pages = "1378--1381",

booktitle = "2013 IEEE International Ultrasonics Symposium, IUS 2013",

note = "2013 IEEE International Ultrasonics Symposium, IUS 2013 ; Conference date: 21-07-2013 Through 25-07-2013",

}

Konno, A, Sumisaka, M, Teshigahara, A, Kano, K, Hashimo, KY, Hirano, H, Esashi, M, Kadota, M & Tanaka, S 2013, ScAlN Lamb wave resonator in GHz range released by XeF₂ etching. in 2013 IEEE International Ultrasonics Symposium, IUS 2013., 6725020, IEEE International Ultrasonics Symposium, IUS, pp. 1378-1381, 2013 IEEE International Ultrasonics Symposium, IUS 2013, Prague, Czech Republic, 13/7/21. https://doi.org/10.1109/ULTSYM.2013.0350

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T1 - ScAlN Lamb wave resonator in GHz range released by XeF2 etching

AU - Konno, Akira

AU - Sumisaka, Masahiro

AU - Teshigahara, Akihiko

AU - Kano, Kazuhiko

AU - Hashimo, Ken Ya

AU - Hirano, Hideki

AU - Esashi, Masayoshi

AU - Kadota, Michio

AU - Tanaka, Shuji

PY - 2013

Y1 - 2013

N2 - Recently, it was reported that the piezoelectric characteristic of AlN was enhanced by doping Sc, and that 40% Sc-doped AlN (Sc0.4Al 0.6N) had approximately 5 times higher piezoelectricity than pure AlN. In this study, we designed, fabricated and evaluated Lamb wave resonators using a Sc0.4Al0.6N thin film. First, we examined elastic constants c44E and c44D of Sc 0.4Al0.6N using a thickness-shear wave resonator excited by parallel electric field, and then designed Lamb wave resonators using revised material constants. The Lamb wave resonators were fabricated by electron beam lithography, reactive ion etching, XeF2 release etching etc. The maximum and average electromechanical coupling coefficients were 8.3% and 6.8%, respectively, for 2.6 GHz devices working in S0 mode.

AB - Recently, it was reported that the piezoelectric characteristic of AlN was enhanced by doping Sc, and that 40% Sc-doped AlN (Sc0.4Al 0.6N) had approximately 5 times higher piezoelectricity than pure AlN. In this study, we designed, fabricated and evaluated Lamb wave resonators using a Sc0.4Al0.6N thin film. First, we examined elastic constants c44E and c44D of Sc 0.4Al0.6N using a thickness-shear wave resonator excited by parallel electric field, and then designed Lamb wave resonators using revised material constants. The Lamb wave resonators were fabricated by electron beam lithography, reactive ion etching, XeF2 release etching etc. The maximum and average electromechanical coupling coefficients were 8.3% and 6.8%, respectively, for 2.6 GHz devices working in S0 mode.

KW - Lamb wave

KW - Micro Electro Mechanical Systems (MEMS)

KW - Resonator

KW - ScAlN

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BT - 2013 IEEE International Ultrasonics Symposium, IUS 2013

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