Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface

R. Z. Bakhtizin; Q. K. Xue; Y. Hasegawa; Toshio Sakurai

Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface

R. Z. Bakhtizin, Q. K. Xue, Y. Hasegawa, Toshio Sakurai

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Abstract

Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.

Original language	English
Pages (from-to)	1037-1045
Number of pages	9
Journal	Surface Investigation X-Ray, Synchrotron and Neutron Techniques
Volume	16
Issue number	7
Publication status	Published - 2001 Dec 1

ASJC Scopus subject areas

Surfaces, Coatings and Films

Cite this

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title = "Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface",

abstract = "Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.",

author = "Bakhtizin, {R. Z.} and Xue, {Q. K.} and Y. Hasegawa and Toshio Sakurai",

year = "2001",

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T1 - Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface

AU - Bakhtizin, R. Z.

AU - Xue, Q. K.

AU - Hasegawa, Y.

AU - Sakurai, Toshio

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.

AB - Atomic structures on the surface of an InAs/GaAs heterostructure grown by the methods of molecular-beam epitaxy have been investigated in situ by scanning tunnel microscopy and reflection high-energy electron diffraction. It has been found that the deposition of a submonolayer In coating on the As-enriched GaAs(001)-(2×4) surface leads to the formation of the new construction (4×2) and the further two-dimensional growth of InAs layers. The phase (6×2) has been observed for the first time at the initial stage of growth of elasticity stressed InAs layers. Atomic models of the (4×2) and (6×2) structures have been discussed.

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ER -

Scanning tunnel microscopy investigation of an atomic structure of stressed epitaxial InAs layers on the GaAs(001) surface

Abstract

ASJC Scopus subject areas

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