Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface

Zheng Gai, W. S. Yang, Q. K. Xue, T. Sakurai, R. G. Zhao

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalSurface Review and Letters
Issue number3-4
Publication statusPublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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