Scanning tunneling microscopy study of the (3 × 1) reconstruction induced by Li adsorption on the Si(111) surface

Raouf Z. Bakhtizin; Chan Park; Tomihiro Hashizume; Toshio Sakurai

doi:10.1016/0169-4332(94)00486-2

Scanning tunneling microscopy study of the (3 × 1) reconstruction induced by Li adsorption on the Si(111) surface

Raouf Z. Bakhtizin, Chan Park, Tomihiro Hashizume, Toshio Sakurai

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Lithium adsorption on a clean Si(111) surface at 300°C has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The (3 × 1) reconstruction of the Si(111)-7 × 7 surface is observed at submonolayer Li coverage and post deposition anneal. It has been found that there is a threshold depending on the Li coverage and annealing temperature for the (3 × 1) structure formation process. However, there is no evidence of any 3× 3 reconstruction of the Si(111) surface induced by lithium adsorption under the experimental conditions that we used. By comparing the number of Li adatoms on the definite area of the Si(111) surface after deposition and annealing at 400°C it has been proven that the (3 × 1) islands are not only consisting of Si atoms.

Original language	English
Pages (from-to)	347-352
Number of pages	6
Journal	Applied Surface Science
Volume	87-88
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)00486-2
Publication status	Published - 1995 Mar 2

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(94)00486-2

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title = "Scanning tunneling microscopy study of the (3 × 1) reconstruction induced by Li adsorption on the Si(111) surface",

abstract = "Lithium adsorption on a clean Si(111) surface at 300°C has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The (3 × 1) reconstruction of the Si(111)-7 × 7 surface is observed at submonolayer Li coverage and post deposition anneal. It has been found that there is a threshold depending on the Li coverage and annealing temperature for the (3 × 1) structure formation process. However, there is no evidence of any 3× 3 reconstruction of the Si(111) surface induced by lithium adsorption under the experimental conditions that we used. By comparing the number of Li adatoms on the definite area of the Si(111) surface after deposition and annealing at 400°C it has been proven that the (3 × 1) islands are not only consisting of Si atoms.",

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AU - Hashizume, Tomihiro

AU - Sakurai, Toshio

PY - 1995/3/2

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N2 - Lithium adsorption on a clean Si(111) surface at 300°C has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The (3 × 1) reconstruction of the Si(111)-7 × 7 surface is observed at submonolayer Li coverage and post deposition anneal. It has been found that there is a threshold depending on the Li coverage and annealing temperature for the (3 × 1) structure formation process. However, there is no evidence of any 3× 3 reconstruction of the Si(111) surface induced by lithium adsorption under the experimental conditions that we used. By comparing the number of Li adatoms on the definite area of the Si(111) surface after deposition and annealing at 400°C it has been proven that the (3 × 1) islands are not only consisting of Si atoms.

AB - Lithium adsorption on a clean Si(111) surface at 300°C has been studied with scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The (3 × 1) reconstruction of the Si(111)-7 × 7 surface is observed at submonolayer Li coverage and post deposition anneal. It has been found that there is a threshold depending on the Li coverage and annealing temperature for the (3 × 1) structure formation process. However, there is no evidence of any 3× 3 reconstruction of the Si(111) surface induced by lithium adsorption under the experimental conditions that we used. By comparing the number of Li adatoms on the definite area of the Si(111) surface after deposition and annealing at 400°C it has been proven that the (3 × 1) islands are not only consisting of Si atoms.

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Scanning tunneling microscopy study of the (3 × 1) reconstruction induced by Li adsorption on the Si(111) surface

Abstract

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