TY - JOUR
T1 - Scanning tunneling microscopy study of the initial reaction of SiH 2 Cl 2 molecules with the Si(111)-7 x 7 surface
AU - Komura, Takuji
AU - Okano, Shinya
AU - Morikawa, Keiji
AU - Hanada, Takashi
AU - Yoshimura, Masamichi
AU - Yao, Takafumi
PY - 1998/6
Y1 - 1998/6
N2 - The initial stage of the reaction of dichlorosilane (SiH 2 Cl 2 ) with the Si(111)-(7 × 7) surface under exposure below 1 L is investigated using a scanning tunneling microscope (STM). We found that corner adatoms are preferentially reacted over the center adatoms at the very beginning of exposure. The initial reaction process of SiH 2 Cl 2 with Si(111)-(7 × 7) surface is discussed. It is suggested that the preferential reactivity of a corner-hole atom is reduced as the exposure increases, which may give rise to reacted rest atoms.
AB - The initial stage of the reaction of dichlorosilane (SiH 2 Cl 2 ) with the Si(111)-(7 × 7) surface under exposure below 1 L is investigated using a scanning tunneling microscope (STM). We found that corner adatoms are preferentially reacted over the center adatoms at the very beginning of exposure. The initial reaction process of SiH 2 Cl 2 with Si(111)-(7 × 7) surface is discussed. It is suggested that the preferential reactivity of a corner-hole atom is reduced as the exposure increases, which may give rise to reacted rest atoms.
KW - Dichlorosilane
KW - Dissociative adsorption
KW - Initial reaction
KW - Preferential adsorption site
KW - Scanning tunneling microscopy
KW - Silicon
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U2 - 10.1016/S0169-4332(98)00019-1
DO - 10.1016/S0169-4332(98)00019-1
M3 - Article
AN - SCOPUS:0032097064
SN - 0169-4332
VL - 130-132
SP - 23
EP - 28
JO - Applied Surface Science
JF - Applied Surface Science
ER -