Scattering theory of the Johnson spin transistor

L. S. Geux, A. Brataas, G. E.W. Bauer

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor.

Original languageEnglish
Pages (from-to)119-128
Number of pages10
JournalActa Physica Polonica A
Issue number1
Publication statusPublished - 2000 Jan
EventThe European Conference: Physics of Magnetism '99 - Poznan, Poland
Duration: 1999 Jun 211999 Jun 25


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