Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs

K. Noguchi; W. Hosoda; K. Matano; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; A. N. Chandorkar; T. Hattori; H. Iwai

doi:10.1149/1.3108351

Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs

K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the modulation of Schottky barrier height (Φ_b) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φ_b for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.

Original language	English
Title of host publication	ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages	29-34
Number of pages	6
Edition	40
DOIs	https://doi.org/10.1149/1.3108351
Publication status	Published - 2009
Externally published	Yes
Event	Solid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

Name	ECS Transactions
Number	40
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Solid State - General - 214th ECS Meeting/RRiME 2008
Country/Territory	United States
City	Honolulu, HI
Period	08/10/12 → 08/10/17

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3108351

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Noguchi, K., Hosoda, W., Matano, K., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Chandorkar, A. N., Hattori, T., & Iwai, H. (2009). Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs. In ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008 (40 ed., pp. 29-34). (ECS Transactions; Vol. 16, No. 40). https://doi.org/10.1149/1.3108351

Noguchi, K, Hosoda, W, Matano, K, Kakushima, K, Ahmet, P, Tsutsui, K, Sugii, N, Chandorkar, AN, Hattori, T & Iwai, H 2009, Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs. in ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008. 40 edn, ECS Transactions, no. 40, vol. 16, pp. 29-34, Solid State - General - 214th ECS Meeting/RRiME 2008, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.3108351

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abstract = "We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.",

author = "K. Noguchi and W. Hosoda and K. Matano and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and Chandorkar, {A. N.} and T. Hattori and H. Iwai",

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AU - Noguchi, K.

AU - Hosoda, W.

AU - Matano, K.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Chandorkar, A. N.

AU - Hattori, T.

AU - Iwai, H.

PY - 2009

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AB - We investigated the modulation of Schottky barrier height (Φb) of Ni silicide by inserting an Er layer between Si (100) substrate and Ni layer before silicidation annealing. Φb for electrons of NiSi was found to be decreased by using this technique. The n-channel SB-MOSFETs with source/drain contacts formed by this technique were fabricated and effects of the barrier lowering was observed on the transistor characteristics.

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DO - 10.1149/1.3108351

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EP - 34

BT - ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008

T2 - Solid State - General - 214th ECS Meeting/RRiME 2008

Y2 - 12 October 2008 through 17 October 2008

ER -

Schottky barrier height modulation by Er insertion and its application to SB-MOSFETs

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