Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure

Jiro Koba; Masataka Yahagi; Junichi Koike

doi:10.1109/IITC52079.2022.9881284

Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure

Jiro Koba, Masataka Yahagi, Junichi Koike

ENG - Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The purpose of this work is to obtain the low specific contact resistivity on n-GaN. We investigated the Schottky barrier height between various metals and GaN and found that Fermi level pinning occurred at the interface between metals and GaN. We also attempted to reduce the specific contact resistivity using MIS structure in order to release Fermi level pinning. We selected GaOx and TiOx for the insulator materials and obtained the low specific contact resistivity of 7.1×10-7 Ω·cm2 with GaOx on n-GaN having Si doping concentration of 2×1018 cm-3.

Original language	English
Title of host publication	2022 IEEE International Interconnect Technology Conference, IITC 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	90-92
Number of pages	3
ISBN (Electronic)	9781665486460
DOIs	https://doi.org/10.1109/IITC52079.2022.9881284
Publication status	Published - 2022
Event	2022 IEEE International Interconnect Technology Conference, IITC 2022 - San Jose, United States Duration: 2022 Jun 27 → 2022 Jun 30

Publication series

Name	2022 IEEE International Interconnect Technology Conference, IITC 2022

Conference

Conference	2022 IEEE International Interconnect Technology Conference, IITC 2022
Country/Territory	United States
City	San Jose
Period	22/6/27 → 22/6/30

Keywords

GaN
MIS contact
specific contact reistivity

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IITC52079.2022.9881284

Cite this

Koba, J., Yahagi, M., & Koike, J. (2022). Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure. In 2022 IEEE International Interconnect Technology Conference, IITC 2022 (pp. 90-92). (2022 IEEE International Interconnect Technology Conference, IITC 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC52079.2022.9881284

Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure. / Koba, Jiro; Yahagi, Masataka; Koike, Junichi.

2022 IEEE International Interconnect Technology Conference, IITC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 90-92 (2022 IEEE International Interconnect Technology Conference, IITC 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koba, J, Yahagi, M & Koike, J 2022, Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure. in 2022 IEEE International Interconnect Technology Conference, IITC 2022. 2022 IEEE International Interconnect Technology Conference, IITC 2022, Institute of Electrical and Electronics Engineers Inc., pp. 90-92, 2022 IEEE International Interconnect Technology Conference, IITC 2022, San Jose, United States, 22/6/27. https://doi.org/10.1109/IITC52079.2022.9881284

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title = "Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure",

abstract = "The purpose of this work is to obtain the low specific contact resistivity on n-GaN. We investigated the Schottky barrier height between various metals and GaN and found that Fermi level pinning occurred at the interface between metals and GaN. We also attempted to reduce the specific contact resistivity using MIS structure in order to release Fermi level pinning. We selected GaOx and TiOx for the insulator materials and obtained the low specific contact resistivity of 7.1×10-7 Ω·cm2 with GaOx on n-GaN having Si doping concentration of 2×1018 cm-3.",

keywords = "GaN, MIS contact, specific contact reistivity",

author = "Jiro Koba and Masataka Yahagi and Junichi Koike",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number 21H04605. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Interconnect Technology Conference, IITC 2022 ; Conference date: 27-06-2022 Through 30-06-2022",

year = "2022",

doi = "10.1109/IITC52079.2022.9881284",

language = "English",

series = "2022 IEEE International Interconnect Technology Conference, IITC 2022",

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T1 - Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure

AU - Koba, Jiro

AU - Yahagi, Masataka

AU - Koike, Junichi

PY - 2022

Y1 - 2022

N2 - The purpose of this work is to obtain the low specific contact resistivity on n-GaN. We investigated the Schottky barrier height between various metals and GaN and found that Fermi level pinning occurred at the interface between metals and GaN. We also attempted to reduce the specific contact resistivity using MIS structure in order to release Fermi level pinning. We selected GaOx and TiOx for the insulator materials and obtained the low specific contact resistivity of 7.1×10-7 Ω·cm2 with GaOx on n-GaN having Si doping concentration of 2×1018 cm-3.

AB - The purpose of this work is to obtain the low specific contact resistivity on n-GaN. We investigated the Schottky barrier height between various metals and GaN and found that Fermi level pinning occurred at the interface between metals and GaN. We also attempted to reduce the specific contact resistivity using MIS structure in order to release Fermi level pinning. We selected GaOx and TiOx for the insulator materials and obtained the low specific contact resistivity of 7.1×10-7 Ω·cm2 with GaOx on n-GaN having Si doping concentration of 2×1018 cm-3.

KW - GaN

KW - MIS contact

KW - specific contact reistivity

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T3 - 2022 IEEE International Interconnect Technology Conference, IITC 2022

SP - 90

EP - 92

BT - 2022 IEEE International Interconnect Technology Conference, IITC 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Interconnect Technology Conference, IITC 2022

Y2 - 27 June 2022 through 30 June 2022

ER -

Schottky barrier height reduction by oxide layer insertion in Al/n-GaN structure

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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