TY - JOUR
T1 - Schottky-Barrier Properties of Nearly-Ideal (N ≃1) Al Contacts on MBE- and Heat Cleaned-Gaas Surfaces
AU - Sakaki, Hiroyuki
AU - Sekiguchi, Yoshinobu
AU - Sun, Dian Chao
AU - Taniguchi, Mitsuhiro
AU - Ohno, Hideo
AU - Tanaica, Akihiro
PY - 1981/2
Y1 - 1981/2
N2 - Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (nç1.02ç1.10) irrespective of the oxide thickness tox, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as toxis reduced, suggesting the presence of negatively charged centers (≃1012/cm2) at GaAs/oxide interfaces.
AB - Aluminum films were deposited in ultra-high vacuum onto heat-cleaned-surfaces as well as oxygen-free MBE surfaces of (100) GaAs to form Schottky barriers with and without intervening oxide layers. The measured ideality factor n was close to unity (nç1.02ç1.10) irrespective of the oxide thickness tox, indicating the transport being dominated by thermionic emission processes. In contrast, the barrier height decreased systematically from 0.89 eV to 0.67 eV, as toxis reduced, suggesting the presence of negatively charged centers (≃1012/cm2) at GaAs/oxide interfaces.
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U2 - 10.1143/JJAP.20.L107
DO - 10.1143/JJAP.20.L107
M3 - Article
AN - SCOPUS:0038977349
SN - 0021-4922
VL - 20
SP - L107-L110
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2
ER -