Schottky contact on a ZnO (0001) single crystal with conducting polymer

M. Nakano; A. Tsukazaki; R. Y. Gunji; K. Ueno; A. Ohtomo; T. Fukumura; M. Kawasaki

doi:10.1063/1.2789697

Schottky contact on a ZnO (0001) single crystal with conducting polymer

M. Nakano, A. Tsukazaki, R. Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, M. Kawasaki

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127 Citations (Scopus)

Abstract

High quality Schottky junctions were fabricated on a ZnO (0001) bulk single crystal by spin coating a commercial conducting polymer, poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), as the metal electrodes. The junctions exhibited excellent rectifying behavior with a typical ideality factor of 1.2. Such parameters as Schottky barrier height (φb) and built-in potential (Vbi) show negligible variation among junctions. The electron affinity of ZnO derived from φb and q Vbi values show a slight deviation (∼0.2 eV), suggesting the existence of spontaneously formed interfacial dipole layer between ZnO (0001) polar surface and anionic PSS molecules.

Original language	English
Article number	142113
Journal	Applied Physics Letters
Volume	91
Issue number	14
DOIs	https://doi.org/10.1063/1.2789697
Publication status	Published - 2007

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title = "Schottky contact on a ZnO (0001) single crystal with conducting polymer",

abstract = "High quality Schottky junctions were fabricated on a ZnO (0001) bulk single crystal by spin coating a commercial conducting polymer, poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), as the metal electrodes. The junctions exhibited excellent rectifying behavior with a typical ideality factor of 1.2. Such parameters as Schottky barrier height (φb) and built-in potential (Vbi) show negligible variation among junctions. The electron affinity of ZnO derived from φb and q Vbi values show a slight deviation (∼0.2 eV), suggesting the existence of spontaneously formed interfacial dipole layer between ZnO (0001) polar surface and anionic PSS molecules.",

author = "M. Nakano and A. Tsukazaki and Gunji, {R. Y.} and K. Ueno and A. Ohtomo and T. Fukumura and M. Kawasaki",

note = "Funding Information: The authors thank the Evaluation Division of Fundamental Technology Center, Research Institute of Electrical Communication, Tohoku University for photoelectron yield spectrum measurement. One of the authors (M.N.) is supported by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists. Another one of the authors (M.K.) thanks for the support from JFE 21st Century Foundation.",

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T1 - Schottky contact on a ZnO (0001) single crystal with conducting polymer

AU - Nakano, M.

AU - Tsukazaki, A.

AU - Gunji, R. Y.

AU - Ueno, K.

AU - Ohtomo, A.

AU - Fukumura, T.

AU - Kawasaki, M.

N1 - Funding Information: The authors thank the Evaluation Division of Fundamental Technology Center, Research Institute of Electrical Communication, Tohoku University for photoelectron yield spectrum measurement. One of the authors (M.N.) is supported by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists. Another one of the authors (M.K.) thanks for the support from JFE 21st Century Foundation.

PY - 2007

Y1 - 2007

N2 - High quality Schottky junctions were fabricated on a ZnO (0001) bulk single crystal by spin coating a commercial conducting polymer, poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), as the metal electrodes. The junctions exhibited excellent rectifying behavior with a typical ideality factor of 1.2. Such parameters as Schottky barrier height (φb) and built-in potential (Vbi) show negligible variation among junctions. The electron affinity of ZnO derived from φb and q Vbi values show a slight deviation (∼0.2 eV), suggesting the existence of spontaneously formed interfacial dipole layer between ZnO (0001) polar surface and anionic PSS molecules.

AB - High quality Schottky junctions were fabricated on a ZnO (0001) bulk single crystal by spin coating a commercial conducting polymer, poly(3,4- ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), as the metal electrodes. The junctions exhibited excellent rectifying behavior with a typical ideality factor of 1.2. Such parameters as Schottky barrier height (φb) and built-in potential (Vbi) show negligible variation among junctions. The electron affinity of ZnO derived from φb and q Vbi values show a slight deviation (∼0.2 eV), suggesting the existence of spontaneously formed interfacial dipole layer between ZnO (0001) polar surface and anionic PSS molecules.

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JF - Applied Physics Letters

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ER -

Schottky contact on a ZnO (0001) single crystal with conducting polymer

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