Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

T. Komeda; F. Stepniak; J. H. Weaver

doi:10.1063/1.104743

Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

T. Komeda, F. Stepniak, J. H. Weaver

IMRAM - Division of Measurements

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator- semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.

Original language	English
Pages (from-to)	2809-2811
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	24
DOIs	https://doi.org/10.1063/1.104743
Publication status	Published - 1991

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abstract = "This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator- semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.",

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AB - This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator- semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.

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Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

Abstract

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