Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110)

T. Komeda, F. Stepniak, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


This letter discusses band bending induced by the deposition of metal clusters coated with onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator- semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.

Original languageEnglish
Pages (from-to)2809-2811
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 1991


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