Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

Haruyuki Endo; Mayo Sugibuchi; Kousuke Takahashi; Shunsuke Goto; Shigeaki Sugimura; Kazuhiro Hane; Yasube Kashiwaba

doi:10.1063/1.2715100

Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

Haruyuki Endo, Mayo Sugibuchi, Kousuke Takahashi, Shunsuke Goto, Shigeaki Sugimura, Kazuhiro Hane, Yasube Kashiwaba

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

104 Citations (Scopus)

Abstract

A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 AW at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 AW for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces.

Original language	English
Article number	121906
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2715100
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2715100

Cite this

@article{5a14caf6bdce49f58da853a1917cce07,

title = "Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate",

abstract = "A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 AW at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 AW for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces.",

author = "Haruyuki Endo and Mayo Sugibuchi and Kousuke Takahashi and Shunsuke Goto and Shigeaki Sugimura and Kazuhiro Hane and Yasube Kashiwaba",

note = "Funding Information: This work was partially supported by the Regional New Life Consortium of the Ministry of Economy, Trade, and Industry of Japan.",

year = "2007",

doi = "10.1063/1.2715100",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

AU - Endo, Haruyuki

AU - Sugibuchi, Mayo

AU - Takahashi, Kousuke

AU - Goto, Shunsuke

AU - Sugimura, Shigeaki

AU - Hane, Kazuhiro

AU - Kashiwaba, Yasube

N1 - Funding Information: This work was partially supported by the Regional New Life Consortium of the Ministry of Economy, Trade, and Industry of Japan.

PY - 2007

Y1 - 2007

N2 - A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 AW at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 AW for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces.

AB - A Schottky ultraviolet photodiode using a (0001) ZnO single crystal grown by the hydrothermal growth method is reported. The photodiode consisted of a semitransparent Pt film for the Schottky electrode and an Al thin film for the Ohmic electrode. The photodiode had polarity dependences on current-voltage characteristics and on responsivity. In the case of the Schottky electrode on the zinc surface, the responsivity was 0.185 AW at a wavelength of 365 nm. On the other hand, the responsivity was 0.09 AW for an oxygen surface. The results are attributed to the polarity dependences of surface chemical reactivity and the surface state density on ZnO surfaces.

UR - http://www.scopus.com/inward/record.url?scp=33947581035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947581035&partnerID=8YFLogxK

U2 - 10.1063/1.2715100

DO - 10.1063/1.2715100

M3 - Article

AN - SCOPUS:33947581035

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121906

ER -

Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this