Scintillation properties of Ce doped (Lu,Gd)3(Ga,Al) 5O12 single crystal grown by the micro-puling-down method

Takanori Endo; Kei Kamada; Takayuki Yanagida; Kousuke Tsutumi; Yoshiyuki Usuki; Martin Nikl; Yutaka Fujimoto; Akihiro Fukabori; Akira Yoshikawa

doi:10.1109/NSSMIC.2011.6154630

Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method

Takanori Endo, Kei Kamada, Takayuki Yanagida, Kousuke Tsutumi, Yoshiyuki Usuki, Martin Nikl, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this report, the Ce: (Lu,Gd)₃(Ga,Al)₅O ₁₂ single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al₃₊ sites by Ga³⁺ and at the Lu³⁺ sites by Gd³⁺ in garnet structure has been studied. In these crystals, Ce³⁺ 4f-5d emission is observed with 500-530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu₂Gd₁(Ga,Al) ₅O₁₂ series, Ce: Lu₂Gd₁Ga ₃Al₂O₁₂ shows highest emission intensity. The light yield of Ce: Lu₂Gd₁Ga₃Al ₂O₁₂ sample with 3mmφx1mm size was around 30,000photon/MeV using calibration from ⁵⁵Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm³.

Original language	English
Title of host publication	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1556-1558
Number of pages	3
ISBN (Print)	9781467301183
DOIs	https://doi.org/10.1109/NSSMIC.2011.6154630
Publication status	Published - 2011
Event	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 - Valencia, Spain Duration: 2011 Oct 23 → 2011 Oct 29

Publication series

Name	IEEE Nuclear Science Symposium Conference Record
ISSN (Print)	1095-7863

Other

Other	2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011
Country/Territory	Spain
City	Valencia
Period	11/10/23 → 11/10/29

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Access to Document

10.1109/NSSMIC.2011.6154630

Cite this

Endo, T., Kamada, K., Yanagida, T., Tsutumi, K., Usuki, Y., Nikl, M., Fujimoto, Y., Fukabori, A., & Yoshikawa, A. (2011). Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011 (pp. 1556-1558). [6154630] (IEEE Nuclear Science Symposium Conference Record). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NSSMIC.2011.6154630

Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method. / Endo, Takanori; Kamada, Kei; Yanagida, Takayuki et al.
2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc., 2011. p. 1556-1558 6154630 (IEEE Nuclear Science Symposium Conference Record).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, T, Kamada, K, Yanagida, T, Tsutumi, K, Usuki, Y, Nikl, M, Fujimoto, Y, Fukabori, A & Yoshikawa, A 2011, Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method. in 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011., 6154630, IEEE Nuclear Science Symposium Conference Record, Institute of Electrical and Electronics Engineers Inc., pp. 1556-1558, 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011, Valencia, Spain, 11/10/23. https://doi.org/10.1109/NSSMIC.2011.6154630

Endo T, Kamada K, Yanagida T, Tsutumi K, Usuki Y, Nikl M et al. Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method. In 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc. 2011. p. 1556-1558. 6154630. (IEEE Nuclear Science Symposium Conference Record). doi: 10.1109/NSSMIC.2011.6154630

Endo, Takanori ; Kamada, Kei ; Yanagida, Takayuki et al. / Scintillation properties of Ce doped (Lu,Gd)₃(Ga,Al) ₅O₁₂ single crystal grown by the micro-puling-down method. 2011 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2011. Institute of Electrical and Electronics Engineers Inc., 2011. pp. 1556-1558 (IEEE Nuclear Science Symposium Conference Record).

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title = "Scintillation properties of Ce doped (Lu,Gd)3(Ga,Al) 5O12 single crystal grown by the micro-puling-down method",

abstract = "In this report, the Ce: (Lu,Gd)3(Ga,Al)5O 12 single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu2Gd1(Ga,Al) 5O12 series, Ce: Lu2Gd1Ga 3Al2O12 shows highest emission intensity. The light yield of Ce: Lu2Gd1Ga3Al 2O12 sample with 3mmφx1mm size was around 30,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm3.",

author = "Takanori Endo and Kei Kamada and Takayuki Yanagida and Kousuke Tsutumi and Yoshiyuki Usuki and Martin Nikl and Yutaka Fujimoto and Akihiro Fukabori and Akira Yoshikawa",

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AU - Tsutumi, Kousuke

AU - Usuki, Yoshiyuki

AU - Nikl, Martin

AU - Fujimoto, Yutaka

AU - Fukabori, Akihiro

AU - Yoshikawa, Akira

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N2 - In this report, the Ce: (Lu,Gd)3(Ga,Al)5O 12 single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu2Gd1(Ga,Al) 5O12 series, Ce: Lu2Gd1Ga 3Al2O12 shows highest emission intensity. The light yield of Ce: Lu2Gd1Ga3Al 2O12 sample with 3mmφx1mm size was around 30,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm3.

AB - In this report, the Ce: (Lu,Gd)3(Ga,Al)5O 12 single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu2Gd1(Ga,Al) 5O12 series, Ce: Lu2Gd1Ga 3Al2O12 shows highest emission intensity. The light yield of Ce: Lu2Gd1Ga3Al 2O12 sample with 3mmφx1mm size was around 30,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm3.

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