TY - JOUR
T1 - Search for the boron quasicrystal by first-principle-calculation
AU - Takahashi, Takahiro
AU - Kitahara, Koichi
AU - Katsura, Yukari
AU - Okada, Junpei
AU - Matsushita, Yu ichiro
AU - Kimura, Kaoru
N1 - Funding Information:
This work was supported by the Japan Society for the Promotion of Science (JSPS) KAKENHI Grant Number JP19H02414, JP19H05818 and JP19H05820 .
Publisher Copyright:
© 2020 Elsevier Masson SAS
PY - 2020/10
Y1 - 2020/10
N2 - Among quasicrystals, no semiconductor has been reported, and the existence of semiconducting quasicrystal is one of the major questions in the solid-state physics, and a semiconducting quasicrystal is expected to be a high performance thermoelectric material. First-principles calculations was performed on four real crystalline structures and hypothetical approximant crystalline and quasicrystalline structures, and total energies were calculated. The formation energy of the α-type 1/1-cubic approximant crystal was found to be very close to the estimated value based on the approximate equation using the formation energy and abundance ratio of α-prolate and α-oblate. From this, it is considered that the estimated value by the approximate equation is reliable, and it is estimated that the β-type 1/1-cubic approximant crystal and β-type quasicrystal have the almost the same formation energy as the α-tetragonal boron phase known as metastable phase. This suggests the possibility of formation of boron quasicrystal as a metastable phase. In addition, the electronic density of states was clarified in the α-type 1/1-cubic approximant crystal. As a result, it was shown that the α-type 1/1-cubic approximant crystal is a semiconductor having a band gap of about 0.25 eV, and it can be strongly expected that the boron quasicrystal is also a semiconductor.
AB - Among quasicrystals, no semiconductor has been reported, and the existence of semiconducting quasicrystal is one of the major questions in the solid-state physics, and a semiconducting quasicrystal is expected to be a high performance thermoelectric material. First-principles calculations was performed on four real crystalline structures and hypothetical approximant crystalline and quasicrystalline structures, and total energies were calculated. The formation energy of the α-type 1/1-cubic approximant crystal was found to be very close to the estimated value based on the approximate equation using the formation energy and abundance ratio of α-prolate and α-oblate. From this, it is considered that the estimated value by the approximate equation is reliable, and it is estimated that the β-type 1/1-cubic approximant crystal and β-type quasicrystal have the almost the same formation energy as the α-tetragonal boron phase known as metastable phase. This suggests the possibility of formation of boron quasicrystal as a metastable phase. In addition, the electronic density of states was clarified in the α-type 1/1-cubic approximant crystal. As a result, it was shown that the α-type 1/1-cubic approximant crystal is a semiconductor having a band gap of about 0.25 eV, and it can be strongly expected that the boron quasicrystal is also a semiconductor.
KW - Boron
KW - Formation energy
KW - Metastable phase
KW - Quasicrystal
KW - Semiconductor
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U2 - 10.1016/j.solidstatesciences.2020.106377
DO - 10.1016/j.solidstatesciences.2020.106377
M3 - Article
AN - SCOPUS:85091206659
SN - 1293-2558
VL - 108
JO - Solid State Sciences
JF - Solid State Sciences
M1 - 106377
ER -