TY - JOUR
T1 - Seed shape dependence of Si solid-phase epitaxy
T2 - Preferential facet growth
AU - Murakami, Eiichi
AU - Moniwa, Masahiro
AU - Kusukawa, Kikuo
AU - Miyao, Masanobu
AU - Warabisako, Terunori
AU - Wada, Yasuo
PY - 1988
Y1 - 1988
N2 - A new facet formation mode in Si lateral solid-phase epitaxy (L-SPE) of amorphous Si on SiO2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a {111} facet with a slow SPE rate or a {110} facet with a fast SPE rate dominates in the case of {100} Si substrate. This preferential facet growth is explained using a microscopic model of crystallization, and seems to be generalized to other crystal growth and etching processes. Similar results are obtained for seeds surrounded by an SiO2 layer and for seeds surrounding an SiO2 island. These results must be considered in practical device design.
AB - A new facet formation mode in Si lateral solid-phase epitaxy (L-SPE) of amorphous Si on SiO2 is presented. This mode occurs in the case of L-SPE using a two-dimensional seed area. Depending on whether the seed shape is convex or concave, a {111} facet with a slow SPE rate or a {110} facet with a fast SPE rate dominates in the case of {100} Si substrate. This preferential facet growth is explained using a microscopic model of crystallization, and seems to be generalized to other crystal growth and etching processes. Similar results are obtained for seeds surrounded by an SiO2 layer and for seeds surrounding an SiO2 island. These results must be considered in practical device design.
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U2 - 10.1063/1.340442
DO - 10.1063/1.340442
M3 - Article
AN - SCOPUS:36549095232
SN - 0021-8979
VL - 63
SP - 4975
EP - 4978
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 10
ER -