Segregation and diffusion of phosphorus from doped Si1-xGex films into silicon

S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota

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14 Citations (Scopus)


Segregation and diffusion of P from in situ doped Si1-xGex (0.25≤x≤0.8) epitaxial films into Si at 750-850 °C were investigated using secondary ion mass spectroscopy and differential resistance measurements. It was found that the surface P concentration in the diffused layer in Si was higher than the P concentration in the Si1-xGex film, which signifies the segregation of P from the Si1-xGex film into Si. The segregation coefficient, defined as the ratio of the active P concentration in the Si to that in the Si1-xGex film, was about 2.5 at 800 °C in the case of the Si0.75Ge0.25 film as a diffusion source and increased with increasing Ge fraction. It was found that the P diffusion profiles in Si were normalized by xl√t, even though the segregation of P occurred, the diffusion coefficient of P depended on the surface P concentration, and the high concentration diffusion characteristics of P in Si were similar to those reported by using a conventional diffusion source.

Original languageEnglish
Pages (from-to)5480-5483
Number of pages4
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1999 Nov 15


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