TY - JOUR
T1 - Segregation of boron in germanium crystal
AU - Taishi, T.
AU - Murao, Y.
AU - Ohno, Y.
AU - Yonenaga, I.
PY - 2008/12/15
Y1 - 2008/12/15
N2 - A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum solubility of B into Ge was estimated to be 2.5×1018 cm-3. The equilibrium segregation coefficient of B in Ge was considered to be 5-6, much smaller than that reported previously.
AB - A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum solubility of B into Ge was estimated to be 2.5×1018 cm-3. The equilibrium segregation coefficient of B in Ge was considered to be 5-6, much smaller than that reported previously.
KW - A1. Crystal growth
KW - A1. Segregation
KW - A2. Czochralski method
KW - B1. Germanium
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U2 - 10.1016/j.jcrysgro.2008.10.036
DO - 10.1016/j.jcrysgro.2008.10.036
M3 - Article
AN - SCOPUS:57649156221
SN - 0022-0248
VL - 311
SP - 59
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -