Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing

Junichi Murota; Manabu Kato; Nobuo Mikoshiba; Shoichi Ono

Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing

Junichi Murota, Manabu Kato, Nobuo Mikoshiba, Shoichi Ono

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

By ultraclean Si and Ge CVD processing using SiH₄ and GeH₄ gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH₄ induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH₄ and on CVD BPSG compared with SiO₂. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.

Original language	English
Pages	141-143
Number of pages	3
Publication status	Published - 1991 Jan 1
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{437e14c619184cf29d4623e4edd905a0,

title = "Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing",

abstract = "By ultraclean Si and Ge CVD processing using SiH4 and GeH4 gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH4 induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH4 and on CVD BPSG compared with SiO2. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.",

author = "Junichi Murota and Manabu Kato and Nobuo Mikoshiba and Shoichi Ono",

year = "1991",

month = jan,

day = "1",

language = "English",

pages = "141--143",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

}

TY - CONF

T1 - Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing

AU - Murota, Junichi

AU - Kato, Manabu

AU - Mikoshiba, Nobuo

AU - Ono, Shoichi

PY - 1991/1/1

Y1 - 1991/1/1

N2 - By ultraclean Si and Ge CVD processing using SiH4 and GeH4 gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH4 induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH4 and on CVD BPSG compared with SiO2. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.

AB - By ultraclean Si and Ge CVD processing using SiH4 and GeH4 gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH4 induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH4 and on CVD BPSG compared with SiO2. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.

UR - http://www.scopus.com/inward/record.url?scp=0025902870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025902870&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025902870

SP - 141

EP - 143

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Selective epitaxial growth of silicon and germanium at low temperatures using ultraclean CVD processing

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this