By ultraclean Si and Ge CVD processing using SiH4 and GeH4 gases, a drastic decrease of epitaxial growth temperature and an increase of selectivity between Si and Si oxide are obtained. Expressing the deposition rate by an equation similar to the Langmuir adsorption isotherm, it is proposed that the surface reaction proceeds at adsorption sites consisting of bonds on the surface. The SiH4 induces nucleation on the oxide. The nucleation is suppressed in the presence of GeH4 and on CVD BPSG compared with SiO2. As a result, 500nm-thick selective growth of Si at 850°C and Si-Ge alloy at 550°C could be realized. A perfect selective growth of Ge in via-holes shows that there are two epitaxial growth mechanisms, step-flow and dangling-bond dominated growth.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
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