Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

Maki Sugai; Toshio Kochiya; Yutaka Oyama; Jun Ichi Nishizawa

doi:10.1016/j.jpcs.2007.07.005

Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

Maki Sugai, Toshio Kochiya, Yutaka Oyama, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.

Original language	English
Pages (from-to)	411-414
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jpcs.2007.07.005
Publication status	Published - 2008 Feb 1

Keywords

A. Semiconductors
A. Thin films
B. Epitaxial growth
C. X-ray diffraction
D. Lattice dynamics

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/j.jpcs.2007.07.005

Cite this

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title = "Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy",

abstract = "Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.",

keywords = "A. Semiconductors, A. Thin films, B. Epitaxial growth, C. X-ray diffraction, D. Lattice dynamics",

author = "Maki Sugai and Toshio Kochiya and Yutaka Oyama and Nishizawa, {Jun Ichi}",

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T1 - Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

AU - Sugai, Maki

AU - Kochiya, Toshio

AU - Oyama, Yutaka

AU - Nishizawa, Jun Ichi

PY - 2008/2/1

Y1 - 2008/2/1

N2 - Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.

AB - Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.

KW - A. Semiconductors

KW - A. Thin films

KW - B. Epitaxial growth

KW - C. X-ray diffraction

KW - D. Lattice dynamics

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U2 - 10.1016/j.jpcs.2007.07.005

DO - 10.1016/j.jpcs.2007.07.005

M3 - Article

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SN - 0022-3697

VL - 69

SP - 411

EP - 414

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 2-3

ER -

Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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