Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy

Maki Sugai, Toshio Kochiya, Yutaka Oyama, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.

Original languageEnglish
Pages (from-to)411-414
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number2-3
Publication statusPublished - 2008 Feb 1


  • A. Semiconductors
  • A. Thin films
  • B. Epitaxial growth
  • C. X-ray diffraction
  • D. Lattice dynamics

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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