Selective Fabrication of Mott-Insulating and Metallic Monolayer TaSe2

Yuki Nakata; Takuya Yoshizawa; Katsuaki Sugawara; Yuki Umemoto; Takashi Takahashi; Takafumi Sato

doi:10.1021/acsanm.8b00184

Selective Fabrication of Mott-Insulating and Metallic Monolayer TaSe₂

Yuki Nakata, Takuya Yoshizawa, Katsuaki Sugawara, Yuki Umemoto, Takashi Takahashi, Takafumi Sato

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We report the selective fabrication of monolayer TaSe₂ with trigonal-prismatic (1H) or octahedral (1T) crystal structure on bilayer graphene by the molecular-beam-epitaxy method. By angle-resolved photoemission spectroscopy, we found that monolayer 1H-TaSe₂ shows a metallic electronic structure with a dispersive band across the Fermi level (E_F) similar to the bulk crystal, while monolayer 1T-TaSe₂ has a sizable energy gap at E_F indicative of the insulating nature in contrast to the metallic nature of bulk 1T-TaSe₂.

Original language	English
Pages (from-to)	1456-1460
Number of pages	5
Journal	ACS Applied Nano Materials
Volume	1
Issue number	4
DOIs	https://doi.org/10.1021/acsanm.8b00184
Publication status	Published - 2018 Apr 27

Keywords

2D materials
Mott insulator
TaSe
angle-resolved photoemission spectroscopy
electronic states
transition-metal dichalcogenides

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsanm.8b00184

Cite this

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title = "Selective Fabrication of Mott-Insulating and Metallic Monolayer TaSe2 ",

abstract = "We report the selective fabrication of monolayer TaSe2 with trigonal-prismatic (1H) or octahedral (1T) crystal structure on bilayer graphene by the molecular-beam-epitaxy method. By angle-resolved photoemission spectroscopy, we found that monolayer 1H-TaSe2 shows a metallic electronic structure with a dispersive band across the Fermi level (EF) similar to the bulk crystal, while monolayer 1T-TaSe2 has a sizable energy gap at EF indicative of the insulating nature in contrast to the metallic nature of bulk 1T-TaSe2.",

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AU - Nakata, Yuki

AU - Yoshizawa, Takuya

AU - Sugawara, Katsuaki

AU - Umemoto, Yuki

AU - Takahashi, Takashi

AU - Sato, Takafumi

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AB - We report the selective fabrication of monolayer TaSe2 with trigonal-prismatic (1H) or octahedral (1T) crystal structure on bilayer graphene by the molecular-beam-epitaxy method. By angle-resolved photoemission spectroscopy, we found that monolayer 1H-TaSe2 shows a metallic electronic structure with a dispersive band across the Fermi level (EF) similar to the bulk crystal, while monolayer 1T-TaSe2 has a sizable energy gap at EF indicative of the insulating nature in contrast to the metallic nature of bulk 1T-TaSe2.

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