Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure

Toyohiro Chikyo; Nobuyuki Koguchi

Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure

Toyohiro Chikyo, Nobuyuki Koguchi

Research output: Contribution to conference › Paper › peer-review

Abstract

A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga₂Se₃ layer formation at the GaAs/Se-terminated GaAlAs interface.

Original language	English
Pages	582-584
Number of pages	3
Publication status	Published - 1992 Dec 1
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure. / Chikyo, Toyohiro; Koguchi, Nobuyuki.
1992. 582-584 Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn.

Research output: Contribution to conference › Paper › peer-review

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abstract = "A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.",

author = "Toyohiro Chikyo and Nobuyuki Koguchi",

year = "1992",

month = dec,

day = "1",

language = "English",

pages = "582--584",

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AU - Chikyo, Toyohiro

AU - Koguchi, Nobuyuki

PY - 1992/12/1

Y1 - 1992/12/1

N2 - A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.

AB - A selective growth of GaAs micro crystal was demonstrated on a Se-terminated GaAlAs-surface. At first, Ga molecules were supplied to the Se-terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs micro crystals were observed to grow selectively from Ga droplets on the surface. The cross sectional investigations by the high resolution electron microscope revealed that a epitaxial growth of GaAs with (111) facets and a possibility of Ga2Se3 layer formation at the GaAs/Se-terminated GaAlAs interface.

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T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Selective growth of GaAs micro crystals on a Se-terminated GaAlAs surface from Ga droplets for the quantum well box structure

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