Selective in-plane nitrogen doping of graphene by an energy-controlled neutral beam

Nitrogen-doped graphene promises to improve current electronic devices, sensors, and energy-based devices. To this end, the bonding states between carbon and nitrogen atoms can be manipulated to tailor the properties of the doped graphene. For example, graphitic nitrogen is known to promote desired catalytic activities in graphene fuel-cell systems, resulting from a four-electron reaction. However, established nitrogen-doping methods lack selectivity in dopant chemical identity and in dopant location; both are key factors in graphene property design because the properties depend on the chemical identity and location of the dopant. Here, we utilize a nitrogen neutral beam (NB) technique - with exquisite beam energy control - to dope graphene with nitrogen. Using x-ray photoelectron and Raman spectroscopy, we show that the energy of the nitrogen NB not only determines the chemistry of the nitrogen dopant introduced to graphene, but it also dictates the doping locations within graphene layers.