Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Yutaka Oyama; Piotr Plotka; Jun ichi Nishizawa

doi:10.1016/0169-4332(94)90193-7

Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Yutaka Oyama, Piotr Plotka, Jun ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH₃ pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of {reversed tilde} 480°C compared with conventional high temperature treatment at {reversed tilde} 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p⁺ barrier layer thickness, which shows the DC transconductance g_m as high as 1500 mS/mm with good reproducibility.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Applied Surface Science
Volume	82-83
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)90193-7
Publication status	Published - 1994 Dec 2
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films

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10.1016/0169-4332(94)90193-7

Cite this

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title = "Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application",

abstract = "This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of {reversed tilde} 480°C compared with conventional high temperature treatment at {reversed tilde} 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 {\AA} having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.",

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AU - Oyama, Yutaka

AU - Plotka, Piotr

AU - Nishizawa, Jun ichi

PY - 1994/12/2

Y1 - 1994/12/2

N2 - This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of {reversed tilde} 480°C compared with conventional high temperature treatment at {reversed tilde} 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.

AB - This paper reports the effects of low temperature surface treatment on the GaAs regrown interface quality prepared by photo-stimulated molecular layer epitaxy. The regrown diode characteristics are investigated as functions of treatment temperature, exposing AsH3 pressure and duration. Optimized surface treatment gives a good regrown interface even at low temperatures of {reversed tilde} 480°C compared with conventional high temperature treatment at {reversed tilde} 600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photo-emission spectroscopy (XPS) and quadrupole mass analysis (QMS). Low temperature surface treatment is successfully applied to the ISIT fabrication with a channel length of 1800-100 Å having a few monolayer p+ barrier layer thickness, which shows the DC transconductance gm as high as 1500 mS/mm with good reproducibility.

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Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Abstract

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