Selective nitrogen doping of graphene by energy-controlled neutral beam

Takeru Okada; Seiji Samukawa

doi:10.1109/NANO.2015.7388856

Selective nitrogen doping of graphene by energy-controlled neutral beam

Takeru Okada, Seiji Samukawa

ENG - Electronic Engineering

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Nitrogen-doped graphene potentially could be used in electronic devices, sensors, and energy-based devices. The bonding state between the carbon and nitrogen for each application plays an important role, e.g., the graphitic nitrogen has a high catalytic activity in fuel cell systems. However, it is still difficult to synthesize the bonding state selectivity. We conducted a nitrogen neutral beam modification of graphene, which has precise controllable beam energy. XPS analysis revealed that the bonding state of the carbon nitrogen depends on the beam energy and a moderate level of beam energy from a nitrogen neutral beam selectively forms graphitic carbon. The bonding state control during the nitrogen doping process was found to be possible, and a neutral beam induced doped graphene synthesis could potentially be better for many different applications.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1247-1249
Number of pages	3
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388856
Publication status	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15/7/27 → 15/7/30

Keywords

Graphene
Neutral beam
Nitrogen doping

Access to Document

10.1109/NANO.2015.7388856

Cite this

Okada, T., & Samukawa, S. (2015). Selective nitrogen doping of graphene by energy-controlled neutral beam. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1247-1249). Article 7388856 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388856

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title = "Selective nitrogen doping of graphene by energy-controlled neutral beam",

abstract = "Nitrogen-doped graphene potentially could be used in electronic devices, sensors, and energy-based devices. The bonding state between the carbon and nitrogen for each application plays an important role, e.g., the graphitic nitrogen has a high catalytic activity in fuel cell systems. However, it is still difficult to synthesize the bonding state selectivity. We conducted a nitrogen neutral beam modification of graphene, which has precise controllable beam energy. XPS analysis revealed that the bonding state of the carbon nitrogen depends on the beam energy and a moderate level of beam energy from a nitrogen neutral beam selectively forms graphitic carbon. The bonding state control during the nitrogen doping process was found to be possible, and a neutral beam induced doped graphene synthesis could potentially be better for many different applications.",

keywords = "Graphene, Neutral beam, Nitrogen doping",

author = "Takeru Okada and Seiji Samukawa",

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Okada, T & Samukawa, S 2015, Selective nitrogen doping of graphene by energy-controlled neutral beam. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388856, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1247-1249, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388856

Selective nitrogen doping of graphene by energy-controlled neutral beam. / Okada, Takeru; Samukawa, Seiji.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1247-1249 7388856 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selective nitrogen doping of graphene by energy-controlled neutral beam

AU - Okada, Takeru

AU - Samukawa, Seiji

PY - 2015

Y1 - 2015

N2 - Nitrogen-doped graphene potentially could be used in electronic devices, sensors, and energy-based devices. The bonding state between the carbon and nitrogen for each application plays an important role, e.g., the graphitic nitrogen has a high catalytic activity in fuel cell systems. However, it is still difficult to synthesize the bonding state selectivity. We conducted a nitrogen neutral beam modification of graphene, which has precise controllable beam energy. XPS analysis revealed that the bonding state of the carbon nitrogen depends on the beam energy and a moderate level of beam energy from a nitrogen neutral beam selectively forms graphitic carbon. The bonding state control during the nitrogen doping process was found to be possible, and a neutral beam induced doped graphene synthesis could potentially be better for many different applications.

AB - Nitrogen-doped graphene potentially could be used in electronic devices, sensors, and energy-based devices. The bonding state between the carbon and nitrogen for each application plays an important role, e.g., the graphitic nitrogen has a high catalytic activity in fuel cell systems. However, it is still difficult to synthesize the bonding state selectivity. We conducted a nitrogen neutral beam modification of graphene, which has precise controllable beam energy. XPS analysis revealed that the bonding state of the carbon nitrogen depends on the beam energy and a moderate level of beam energy from a nitrogen neutral beam selectively forms graphitic carbon. The bonding state control during the nitrogen doping process was found to be possible, and a neutral beam induced doped graphene synthesis could potentially be better for many different applications.

KW - Graphene

KW - Neutral beam

KW - Nitrogen doping

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ER -

Selective nitrogen doping of graphene by energy-controlled neutral beam

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