TY - GEN
T1 - Selective oxidation and Resistivity reduction of Cu-Mn alloy films for self-forming barrier process
AU - Iijima, Jun
AU - Fujii, Yoshito
AU - Neishi, Koji
AU - Koike, Junich
PY - 2008
Y1 - 2008
N2 - Optimum conditions of annealing atmosphere and temperature for the reduction of Mn content from the Cu-Mn alloy layer in Cu-Mn self-forming barrier process were investigated. Mn was selectively oxidized at the surface by annealing in Ar gas containing an impurity level of O2 (<0.01ppm). Resistivity of the film was decreased to 2.0 μΩcm after annealing. On the other hand, internal oxidation of Cu-Mn alloy was observed with no external protective surface oxide layer in Ar containing more than 10 ppm of O 2. An optimum oxygen concentration is found to be in between 0.01 and 10 ppm in latm of Ar gas at 350 °C.
AB - Optimum conditions of annealing atmosphere and temperature for the reduction of Mn content from the Cu-Mn alloy layer in Cu-Mn self-forming barrier process were investigated. Mn was selectively oxidized at the surface by annealing in Ar gas containing an impurity level of O2 (<0.01ppm). Resistivity of the film was decreased to 2.0 μΩcm after annealing. On the other hand, internal oxidation of Cu-Mn alloy was observed with no external protective surface oxide layer in Ar containing more than 10 ppm of O 2. An optimum oxygen concentration is found to be in between 0.01 and 10 ppm in latm of Ar gas at 350 °C.
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U2 - 10.1557/proc-1079-n03-09
DO - 10.1557/proc-1079-n03-09
M3 - Conference contribution
AN - SCOPUS:70350610628
SN - 9781605608648
T3 - Materials Research Society Symposium Proceedings
SP - 47
EP - 52
BT - Materials and Processes for Advanced Interconnects for Microelectronics
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 24 March 2008 through 28 March 2008
ER -